High-power quantum-dot lasers at 1100 nm

Abstract

High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal–organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%).