Applied Physics Letters · 2000 · 115 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum DotsQuantum OptoelectronicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersHigh-power Laser DiodesHigh-power LasersHigh-power Semiconductor LasersMetal-organic Chemical Vapor DepositionPulsed OperationQuantum Dot LasersSemiconductor Laser DiodesSemiconductor Quantum Dots
High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal–organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%).
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1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
K. Nakahara, Masahiko Kondow, T. Kitatani et al. · IEEE Photonics Technology Letters · 1998 · 219 citations