Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

Abstract

Room-temperature continuous-wave operation of a 1.3 μm quantum dot laser is reported. The threshold current for a single layer active region with p–up mounting is only 4.1 mA with a threshold current density of 45 A/cm2. The minimum room temperature threshold current density is 25 A/cm2 for pulsed operation. Cryogenic and temperature dependent measurements are performed on broad-area lasers fabricated from the same active material. At 4 K the broad-area threshold current density for uncoated facets is 6 A/cm2.