Room-temperature operation of In _0.4 Ga _0.6 As/GaAsself-organised quantum dot lasers

Abstract

We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃ 200 ps.