L. J. Mawst

High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

A. Al-Muhanna, L. J. Mawst, D. Botez et al. · Applied Physics Letters · 1998 · 149 citations · Full text

Broad Transverse Waveguide, Engineering, Laser Science +17

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

L. J. Mawst, Arnab Bhattacharya, M. Nesnidal et al. · Applied Physics Letters · 1995 · 35 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

D. Zhou, L. J. Mawst · Applied Physics Letters · 2000 · 33 citations · Full text

Photonics, Optical Materials, Engineering +13

730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

A. Al-Muhanna, J.K. Wade, L. J. Mawst et al. · Applied Physics Letters · 1998 · 22 citations · Full text

Aluminium Nitride, Engineering, Laser Applications +16

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Arnab Bhattacharya, L. J. Mawst, Sabyasachi Nayak et al. · Applied Physics Letters · 1996 · 22 citations · Full text

Optical Materials, Ingaas/ingaasp/ingap Quantum, Engineering +21