Sabyasachi Nayak - Concepedia

Author

Sabyasachi Nayak

University of Wisconsin–Madison

Also Known As

S. Nayak, Sabyasachi Nayak, Suryanarayan Nayak

Publications

475

Citations

H-Index

Concepts

All Affiliations

University of Wisconsin–Madison Qorvo (United States)

About

Sabyasachi Nayak is an author at University of Wisconsin–Madison specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	385
2	Electrical Engineering	9	9	339
3	Applied Physics	4	4	124
4	Materials Science	2	2	46
5	Physics	2	2	40

Sabyasachi Nayak

Publications

414

Citations

H-Index

Page 1

	Year	Citations
High efficiency Ka-band Gallium Nitride power amplifier MMICs Charles F. Campbell, Yueying Liu, Ming-Yih Kao, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2013	60
A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15&#181;m GaN on SiC HEMT Technology Charles F. Campbell, Kim Tran, Ming-Yih Kao, Wide-bandgap SemiconductorElectrical EngineeringK-band 5WEngineeringRf Semiconductor	2012	58
High efficiency Ka-band power amplifier MMICs fabricated with a 0.15&#x00B5;m GaN on SiC HEMT process Charles F. Campbell, Ming-Yih Kao, Sabyasachi Nayak Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPower Device	2012	48
High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology Shuoqi Chen, Sabyasachi Nayak, Charles F. Campbell, Frequency BandWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2016	40
Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process Charles F. Campbell, Sabyasachi Nayak, Ming-Yih Kao, Electrical EngineeringAdvanced 0.15µMEngineeringMeasured PerformanceRf Semiconductor	2016	34
40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiC Michael Roberg, Thi Ri Mya Kywe, Matthew Irvine, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPower Device	2018	33
Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size Keon-Shik Kong, B. Nguyen, Sabyasachi Nayak, Electrical EngineeringKa-band Hpa MmicsEngineeringRf SemiconductorMillimeter Wave Technology	2005	29
In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD Sabyasachi Nayak, D. E. Savage, H.-N. Chu, Journal of Crystal Growth Materials ScienceAfm InvestigationEngineeringSitu RheedCrystal Growth Technology	1995	24
A 1–8GHz Gallium Nitride distributed power amplifier MMIC utilizing a trifilar transformer Charles F. Campbell, Michael Roberg, J Faïn, Electrical EngineeringMeasured PerformanceEngineeringPower DeviceRf Semiconductor	2016	24
Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates Arnab Bhattacharya, L. J. Mawst, Sabyasachi Nayak, Applied Physics Letters Optical MaterialsIngaas/ingaasp/ingap QuantumEngineeringLaser ApplicationsOptoelectronic Devices	1996	22

Page 1