2005 · 29 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsCapacitorsHigh-frequency Amplifier DesignMicrowave Amplifier DesignPower Amplifier DesignPower Amplifier PackagingPower OutputPower Output MeasurementRadio Frequency Power Amplifiers
We report a compact and efficient Ka-band high power amplifier with output power of over 4W at 30GHz and record compact area of 8.63mm/sup 2/ in a Ka-band high power amplifier (HPA) class. The bias capacitors (/spl sim/80pF) are included inside the MMIC so that it reduces the assembly cost in the package or module. We employed a dual-recessed 0.15/spl mu/m power pHEMT production process and 2mil-substrate technology to achieve high output power with high efficiency and compact design. The output power (CW measurement) is 36.2dBm, and, the gain, 22.5dB, at 30GHz. These results set the benchmark of CW output power per millimeter square area for the reported performance of Ka-band HPA MMICs.
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Fully monolithic 4 watt high efficiency Ka-band power amplifier
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2 and 4 watt Ka-band GaAs PHEMT power amplifier MMICs
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