D. Dugas

Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's

K. C. Hwang, P.C. Chao, Carl Creamer et al. · IEEE Electron Device Letters · 1999 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Progress in GaAs metamorphic HEMT technology for microwave applications

P.M. Smith, D. Dugas, K. Chu et al. · 2003 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Advances in InP HEMT technology for high frequency applications

P.M. Smith, K. B. Nichols, W. Kong et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Materials Science +12

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

D. Xu, W. Kong, Xiaoping Yang et al. · IEEE Electron Device Letters · 2008 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

D. Xu, Xiaoping Yang, W. Kong et al. · IEEE Transactions on Electron Devices · 2011 · 11 citations

Engineering, Electrical Engineering, Materials Science +17