Stress measurements in Si microelectronics devices using Raman spectroscopy

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSpectroscopyDevice CharacterizationDevice ReliabilityRaman SpectroscopyResidual StressSilicon MaterialsStress-strain BehaviorLocal Stress AnalysisRaman Data AnalysisRaman Spectral InterpretationSiliconSilicon CharacterizationStressStress Measurement

Abstract

The application of micro-Raman spectroscopy for the measurement of local stress in silicon microelectronics samples is discussed. Practical issues of concern for local stress measurements using micro-Raman spectroscopy are dealt with. Copyright © 1999 John Wiley & Sons, Ltd.

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