Japanese Journal of Applied Physics · 1982 · 38 citations · 6 references
EngineeringMaterials SciencePhysicsElectronic MaterialsMaterials ChemistrySemiconductor MaterialsDopingOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSilicon MaterialsConductivityDoped SemiconductorsPhotoconductivitySemiconductor ConductivitySemiconductor DopingSilicon ChemistrySilicon DopingSilicon Electrical Properties
Nitrogen was doped into discharge-produced a-Si: H during deposition in a SiH 4 /N 2 /Ar or in a SiH 4 /NH 3 /Ar mixture. It was found that dark conductivity and photoconductivity first increase as the doping gas ratio increases, then decrease, then increase again, and finally decrease again. This anomalous behavior is distinct from that of phosphorous-doped a-Si: H, in which dark conductivity and photoconductivity increase monotonically as PH 3 /SiH 4 increases. The phenomenon is discussed using a tentative model of the variation in the network structure of a-Si 1- x N x : H with nitrogen incorporation.
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Substitutional doping of amorphous silicon
P. G. Le Comber · Solid State Communications · 1975 · 1.1K citations
Nitrogen−implanted silicon. II. Electrical properties
J. B. Mitchell, J. Shewchun, D. A. Thompson et al. · Journal of Applied Physics · 1975 · 58 citations