Magnetoconcentration and related galvanomagnetic effects in non-intrinsic semiconductors

Abstract

The magnetoconcentration effect, its main subeffects and applications are studied with regard to semiconductor doping for the various parameters: electric and magnetic fields; bulk and surface recombination rates, etc. In comparison with the well known intrinsic case, important consequences are associated with the effect in slightly p-doped semiconductors. It is shown that during the magnetoconcentration effect, doping is responsible for anomalous negative or positive magnetoresistance as well as for the Hall voltage increase, reduction or even inversion. The effect is generally a maximum in p-doped semiconductors; the optimum doping depends on the ratio of the electron and hole mobilities and on the magnetic induction. The experimental data on n- and p-type germanium with resistivity from 10 -2 to 0.7 Omega are in good agreement with the computed results.