IEEE Electron Device Letters · 2014 · 23 citations · 15 references
EngineeringEmerging Memory TechnologyFerroelectric Random-access Memory3D MemoryElectronic DevicesFerroelectric ApplicationNanoelectronicsMemory DeviceMemory DevicesMaterials ScienceElectrical EngineeringAccess TransistorsElectronic MemoryFlash MemoryMicroelectronicsMemory ReliabilityMemory ArrayElectronic MaterialsFlexible ElectronicsApplied PhysicsSemiconductor MemoryTransistor MemoriesFunctional Materials
We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 × 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.
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Organic Transistors in Optical Displays and Microelectronic Applications
Gerwin H. Gelinck, Paul Heremans, Kazumasa Nomoto et al. · Advanced Materials · 2010 · 611 citations
Polymer and Organic Nonvolatile Memory Devices
Paul Heremans, Gerwin H. Gelinck, Robert Müller et al. · Chemistry of Materials · 2010 · 530 citations · Full text
Non-volatile Memory, Engineering, Emerging Memory Technology +20