High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

Abstract

Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 μm, with a threshold-current density of 220 A/cm2 for 2000 μm cavity-length (Lcav) devices. A threshold current density of only 615 A/cm2 was achieved for cw operation at a temperature of 100 °C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20 °C.