IEEE Electron Device Letters · 1982 · 20 citations · 2 references
EngineeringChemistryMaterials ScienceInorganic ChemistrySemiconductor DevicesTransport PhenomenaElemental ImpuritiesIi-vi SemiconductorsIii-v SemiconductorsImpurity IsolationImpurity Method DevelopmentChemical DiffusionChemical Vapor TransportEquilibrium Vapor PressureImpuritiesImpurity RemovalImpurity SynthesisVapor PressureVapor Pressure Control
A novel method for diffusing volatile impurities (such as Zn) in III-V compounds has been developed. The apparatus described here maintains an appropriate vapor pressure of Zn in a localized and confined manner in close proximity over the III-V compound wafer. This technique is used for diffusing Zn in InP.
2
P.N. Favennec, L. Henry, M. Gauneau et al. · Electronics Letters · 1980 · 14 citations
Natural Sciences, Materials Engineering, Materials Science +12