Yoshifumi Takanashi - Concepedia

Author

Yoshifumi Takanashi

Tokyo University of Science

Also Known As

Takanashi, Y., Y. Takanashi, Yoshifumi Takanashi, Yoshifumi Takanashi Yoshifumi Takanashi, Yoshiro Takanashi

123

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Tokyo University of Science NTT (Japan)Musashino Academia Musicae NTT (United States)

About

Yoshifumi Takanashi is an author at Tokyo University of Science specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	42	1.6K
2	Applied Physics	19	35	1.5K
3	Natural Sciences	3	3	32
4	Chemical Engineering	1	1	18
5	Chemistry	1	1	11

Yoshifumi Takanashi

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method Masayasu Akasaka, Tsutomu Iida, Atsunobu Matsumoto, Journal of Applied Physics EngineeringResidual ImpuritiesCrystal Growth TechnologyThermoelectricsBulk Crystalline	2008	254
Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light Yoshifumi Takanashi, Kenichi Takahata, Y. Muramoto IEEE Transactions on Electron Devices Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSemiconductor TechnologyEngineering	1999	115
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication Yongxun Liu, Shinya Kijima, Etsuro Sugimata, IEEE Transactions on Nanotechnology Materials ScienceTin Gate ElectrodeElectrical EngineeringEngineeringNanoelectronics	2006	115
Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu Tatsuya Sakamoto, Tsutomu Iida, Atsunobu Matsumoto, Journal of Electronic Materials Materials ScienceMaterials EngineeringElectrical EngineeringLocal Density ApproximationEngineering	2010	110
Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics Masayasu Akasaka, Tsutomu Iida, Takashi Nemoto, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringNon-wetting Crystal GrowthCrystal Growth Technology	2007	97
Heteroepitaxial growth and characterization of InP on Si substrates Mitsuru Sugo, Yoshifumi Takanashi, M. M. Al‐Jassim, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyEpitaxial GrowthEngineering	1990	76
Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method Shingo Kishino, Tomohiro Imai, Tsutomu Iida, Journal of Alloys and Compounds Materials ScienceMaterials EngineeringIi-vi SemiconductorOptical MaterialsEngineering	2006	69
Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes Yoshifumi Takanashi, Minoru Kawashima, Yoshiji Horíkoshi Japanese Journal of Applied Physics EngineeringZener BreakdownEpitaxial LayersDonor ConcentrationOptical Properties	1980	62
Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences Tatsuya Sakamoto, Tsutomu Iida, Shota Kurosaki, Journal of Electronic Materials Materials ScienceMaterials EngineeringElectrical EngineeringThermoelectric BehaviorLarge Temperature Differences	2011	59
Power Generation Characteristics of Mg2Si Uni-Leg Thermoelectric Generator Takashi Nemoto, Tsutomu Iida, Junichi Sato, Journal of Electronic Materials Electrical EngineeringEnergy HarvestingEngineeringPower Generation CharacteristicsEnergy Efficiency	2012	42

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