Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 67 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingElectrical MetrologyElectronic Material CharacterizationIntegrated Circuit DesignSemiconductor Device MaterialsBipolar Junction Transistor ModelingDopant ProfilingDoping Profile AnalysisDynamic RangeSemiconductor CharacterizationSemiconductor Device CharacterizationSemiconductor Doping ProfilesSemiconductor Metrology
This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional (2D) dopant profiling techniques (SCM, SSRM, KPFM, SEM, and electron holography). This study was done within the framework of a European project (HERCULAS), which is focused on the improvement of 2D-profiling tools. Different structures (staircase calibration samples, bipolar transistor, junctions) were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted.
12