Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surface

Polar heterojunction interfaces

Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 628 citations

Natural Sciences, Materials Engineering, Materials Science +17

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

T. P. Pearsall, Federico Capasso, R. E. Nahory et al. · Solid-State Electronics · 1978 · 147 citations

Engineering, Electrical Engineering, Materials Science +16

Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

R. Z. Bachrach, R. S. Bauer, P. Chiaradia et al. · Journal of Vacuum Science and Technology · 1981 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +17

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

R. Fischer, John F. Klem, T. J. Drummond et al. · Journal of Applied Physics · 1983 · 117 citations

Engineering, Materials Engineering, Materials Science +17

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

H. Kroemer, K. J. Polasko, Steve C. Wright · Applied Physics Letters · 1980 · 116 citations

Engineering, Materials Engineering, Materials Science +17