Applied Physics Letters · 1980 · 14 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsSemiconductor ReliabilityDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersMolecular Beam EpitaxyPower OutputSemiconductor Laser DiodesSemiconductor Laser Fabrication
The cw threshold currents and total forward series resistances of the proton-bombarded stripe-geometry lasers fabricated from GaAs-Al0.3Ga0.7As double-heterostructure (DH) wafers grown by molecular beam epitaxy (MBE) are at least as low as those similar-geometry lasers grown by liquid phase epitaxy. Yields for such laser diodes of ≳90% were obtained. Randomly picked diodes fabricated from an early MBE DH wafer having a 0.4-μm GaAs active layer have operated continuously at a constant output power of ∼2 mW/mirror in a ∼38 °C dry-nitrogen ambient for more than 13 000 h and are still operating.
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Ultimate low-loss single-mode fibre at 1.55 μm
T. Miya, Y. Terunuma, T. Hosaka et al. · Electronics Letters · 1979 · 633 citations
Degradation of CW GaAs double-heterojunction lasers at 300 K
B.C. De Loach, B.W. Hakki, R. L. Hartman et al. · Proceedings of the IEEE · 1973 · 158 citations