W. R. Holbrook

The high-temperature (55–70 °C) device characteristics of cw (AlGa)As double-heterostructure proton-bombarded stripe lasers grown by molecular beam epitaxy

W. T. Tsang, W. R. Holbrook, P. E. Fraley · Applied Physics Letters · 1981 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

cw electro-optical characteristics and preliminary reliability of double-heterostructure GaAs-Al<i>x</i>Ga1−<i>x</i>As lasers grown by molecular beam epitaxy

W. T. Tsang, R. L. Hartman, H. E. Elder et al. · Applied Physics Letters · 1980 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

The reliability of (AlGa)As double-heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, R. L. Hartman, B. Schwartz et al. · Applied Physics Letters · 1981 · 13 citations

Engineering, Materials Engineering, Materials Science +17