Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations

Engineering, Electrical Engineering, Electronic Materials +16

High-temperature 4.5-/spl mu/m type-II quantum-well laser with Auger suppression

C. L. Felix, J. R. Meyer, I. Vurgaftman et al. · IEEE Photonics Technology Letters · 1997 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

Ohmic contacts to p- and n-type GaSb

C. Heinz · International Journal of Electronics · 1983 · 32 citations

Engineering, Materials Engineering, Materials Science +16

Extremely low specific contact resistivities for <i>p</i>-type GaSb, grown by molecular beam epitaxy

B. Tadayon, C. S. Kyono, M. Fatemi et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 25 citations

Natural Sciences, Materials Science, Physics +15

Electrical and microstructure analysis of ohmic contacts to <i>p</i>- and <i>n</i>-type GaSb, grown by molecular beam epitaxy

A. Vogt, H.L. Hartnagel, G. Miehe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 22 citations

Natural Sciences, Materials Science, Physics +17