Extremely low specific contact resistivities for <i>p</i>-type GaSb, grown by molecular beam epitaxy

Abstract

We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p-type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These are the lowest values ever reported for p-type GaSb. A simple procedure for surface preparation is also reported.