A. Vogt

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering

Stefan Facsko, T. Dekorsy, C. Koerdt et al. · Science · 1999 · 789 citations · Full text

Materials Science, Engineering, Surface Instability +13

Porosity-induced modification of the phonon spectrum of n-GaAs

I. M. Tiginyanu, G. Irmer, J. Monecke et al. · Semiconductor Science and Technology · 1997 · 52 citations · Full text

Materials Science, Semiconductors, Phonon Spectrum +14

Long resonator micromachined tunable GaAs-AlAs Fabry-Perot filter

J. Peerlings, Alfons Dehé, A. Vogt et al. · IEEE Photonics Technology Letters · 1997 · 52 citations

Gaas Technology, Photonics, Optical Materials +14

Ion implantation as a tool for controlling the morphology of porous gallium phosphide

I. M. Tiginyanu, C. Schwab, J.J. Grob et al. · Applied Physics Letters · 1997 · 48 citations · Full text

Materials Science, Materials Engineering, Ion Implantation +12

Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

A. Vogt, A. Simon, H.L. Hartnagel et al. · Journal of Applied Physics · 1998 · 34 citations

Materials Science, Material Analysis, Engineering +14