Ion implantation as a tool for controlling the morphology of porous gallium phosphide

Abstract

We investigate the morphology of porous layers obtained by electrochemical anodization of (100)-oriented n-type GaP substrates before and after a preliminary 5-MeV Kr+ implantation. Apart from favoring the observation of a surface-related phonon in the frequency gap between the bulk optical phonons, ion implantation appears to be an effective means of controlling the morphology of porous GaP, irrespective of initial substrate material features.