Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy

Raman scattering from Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattices

F. Cerdeira, A. Pinczuk, J. C. Bean et al. · Applied Physics Letters · 1984 · 263 citations

Natural Sciences, Materials Science, Physics +17

Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing

Tsunenori Sakamoto, Gen Hashiguchi · Japanese Journal of Applied Physics · 1986 · 168 citations

Natural Sciences, Materials Engineering, Materials Science +17

Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's

T. P. Pearsall, J. C. Bean · IEEE Electron Device Letters · 1986 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

Structural study of Sn-induced superstructures on Ge(111) surfaces by RHEED

Toshihiro Ichikawa, Shozo Ino · Surface Science · 1981 · 123 citations

Natural Sciences, Materials Science, Physics +14

Crystal structure and habit of silicon and germanium particles grown in argon gas

Yahachi Saito · Journal of Crystal Growth · 1979 · 119 citations

Natural Sciences, Materials Science, Physics +9