Concepedia

Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon

Richard Soref, F. Namavar, J.P. Lorenzo

Optics Letters · 1990 · 58 citations · 7 references

Abstract

Low-loss waveguiding at lambda = 1.3 microm has been observed in a partially strained, 10-microm-thick, single-crystal layer of Ge(0.1)Si(0.9) grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.

References

7

Algorithms for the rapid simulation of Rutherford backscattering spectra

Lawrence Doolittle · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 2.8K citations

Engineering, Physics, Electron Diffraction +3

Intrinsic Optical Absorption in Germanium-Silicon Alloys

R. Braunstein, A. R. Moore, Frank Herman · Physical Review · 1958 · 670 citations

Optical Materials, Engineering, Semiconductor Nanostructures +19

All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm

Richard Soref, J. Larenzo · IEEE Journal of Quantum Electronics · 1986 · 401 citations

Channel Waveguides, Photonics, Optical Materials +15

Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

D. V. Lang, R. People, J. C. Bean et al. · Applied Physics Letters · 1985 · 311 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Avalanche gain in Ge<sub>x</sub>Si<sub>1-x</sub>/Si infrared waveguide detectors

T. P. Pearsall, H. Temkin, J. C. Bean et al. · IEEE Electron Device Letters · 1986 · 131 citations

Engineering, Radiation Detection, Physics +13