All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm

Abstract

End-coupled planar and channel waveguides at 1.3 μm have been demonstrated in single-crystal Si layers grown epitaxially on heavily doped Si substrates, and an optical power divider consisting of intersecting channels was designed and fabricated. Optical switches in Si based on electrooptic, acoustooptic, and optical-injection mechanisms are described. The advantages of all-silicon integrated optical components are discussed.