SiC based Technology for High Power Electronics and Packaging Applications

Abstract

Department of Materials Science and Engineering, University of Seoul, Seoul 130-743, Korea(Received June 11, 2014: Corrected June 23, 2014: Accepted June 25, 2014)Abstract: Silicon has been most widely used semiconductor material for power electronic systems. However, Si-basedpower devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices forbetter performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. Newwide band gap materials such as SiC have now been introduced for high power applications. SiC power devices havebeen evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications.In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpartin terms of higher switching performance, higher voltages and higher power density. The recent progress in thedevelopment of high voltage power semiconductor devices is reviewed. Future trends in device development andindustrialization are also addressed.Keywords: SiC, Packaging, Semiconductor, IGBT, JFET