Numerical simulation of hot-electron effects on source-drain burnout characteristics of GaAs power FETs

Transport equations for electrons in two-valley semiconductors

K. Blötekjær · IEEE Transactions on Electron Devices · 1970 · 810 citations

Engineering, Electrical Engineering, Condensed Matter Physics +16

Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's

R.K. Cook, J. Frey · IEEE Transactions on Electron Devices · 1982 · 182 citations

Engineering, Electrical Engineering, Microelectronics +16

Power-limiting breakdown effects in GaAs MESFET's

William R. Frensley · IEEE Transactions on Electron Devices · 1981 · 126 citations

Engineering, Electrical Engineering, Microelectronics +16

Light emission and burnout characteristics of GaAs power MESFET's

R. Yamamoto, A. Higashisaka, Fumio Hasegawa · IEEE Transactions on Electron Devices · 1978 · 70 citations

Engineering, Electrical Engineering, Microelectronics +12

Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

S. H. Wemple, W.C. Niehous, H. Fukui et al. · IEEE Transactions on Electron Devices · 1981 · 64 citations

Engineering, Electrical Engineering, Materials Science +17