Concepedia

Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

J. M. Vandenberg, R. A. Hamm, A. T. Macrander, M. B. Panish, H. Temkin

Applied Physics Letters · 1986 · 27 citations · 6 references

DOI

Concepts

Abstract

We have carried out an x-ray study of 20-well quaternary InGaAsP/InP and ternary InGaAs/InP structures grown on [100]InP by gas source molecular beam epitaxy (GSMBE). The multilayers were found to grow laterally coherent and very closely lattice matched in the [100] growth direction. The presence of well-defined higher order harmonics in the high-resolution x-ray diffraction confirms the excellent quality of InGaAs(P)/InP superlattices grown by the GSMBE technique.

References

6

X-ray diffraction from one-dimensional superlattices in GaAs<sub>1−<i>x</i></sub>P<sub><i>x</i></sub>crystals

A. Segmüller, A. E. Blakeslee · Journal of Applied Crystallography · 1973 · 213 citations

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Gas source MBE of InP and Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i> : Materials properties and heterostructure lasers

M. B. Panish, H. Temkin, S. Sumski · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 129 citations

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Structure and coherence of NbAl multilayer films

D. B. McWhan, M. Gurvitch, J. M. Rowell et al. · Journal of Applied Physics · 1983 · 101 citations

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GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

H. Temkin, M. B. Panish, P. M. Petroff et al. · Applied Physics Letters · 1985 · 90 citations

, , +17

Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices

J. Kervarec, M. Baudet, J. Caulet et al. · Journal of Applied Crystallography · 1984 · 67 citations

, , +17