Behavior of an EL5-like defect in metalorganic vapor-phase epitaxial GaAs:Sb

Abstract

An EL5-like trap in metalorganic vapor-phase epitaxially grown GaAs:Sb has been detected by deep-level transient spectroscopy. The trap behavior has been investigated by changing the growth conditions—the V/III ratio and the level of isoelectronic doping with Sb. It has been found that the activation energy of the EL5-like trap changes from Ec−0.43 eV in the undoped GaAs to Ec−0.35 eV in highly Sb-doped GaAs. It has been observed that the EL5 trap concentration increases with increasing the [AsH3] partial pressure in the undoped material, whereas it decreases with Sb doping in correlation with EL2 kinetic decrease. The results obtained suggest that the complex defect VGaAsi can be a possible candidate for the origin of the EL5-like trap.