Applied Physics Letters · 1981 · 162 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportPhotodetectorsRadiation Damage In MaterialsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsCarrier DynamicsCarrier LifetimeCarrier MobilityCarrier RelaxationCarrier Relaxation DynamicsDefect DensityPhotoconductivityRelaxation Times
Radiation damage caused by ion implantation is used to control the carrier lifetime in silicon-on-sapphire (SOS) films. Photoconductivity measurements show the relaxation time changes by several orders of magnitude and can be as short as 8 ps. The carrier mobility is found to be at least an order of magnitude higher than amorphous silicon materials with similar relaxation times. A photodetector is described that demonstrates the high-speed capability of these high-defect-density films.
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An amorphous silicon photodetector for picosecond pulses
D. H. Auston, P. Lavallard, N. Sol et al. · Applied Physics Letters · 1980 · 142 citations
Engineering, Electrical Engineering, Materials Engineering +17