G. Sixt

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Active since

1971

Affiliations

Fraunhofer Institute for Applied Solid State Physics(Current)

G. Sixt is an author at Fraunhofer Institute for Applied Solid State Physics specializing in electronic materials, materials science, and semiconductor materials.

Publications per year

1971–1979

Publications

Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs Ions

G. Sixt, A. Goetzberger · Applied Physics Letters · 1971 · 36 citations

Engineering, Materials Engineering, Materials Science +17

Minority carrier lifetime in silicon after Ar+ and Si+ implantation

H. Kappert, G. Sixt, G. H. Schwuttke · physica status solidi (a) · 1979 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Cesium profiles in silicon and in SiO2-Si double-layers as determined by SIMS measurements

A. Hurrle, G. Sixt · Applied Physics A · 1975 · 15 citations

Engineering, Materials Engineering, Materials Science +13

Effect of ion-implantation into thermal SiO<sub>2</sub>-films on sodium ion drift

C. R. Fritzsche, A. Goetzberger, A. Axmann et al. · Radiation Effects · 1971 · 12 citations

Engineering, Materials Engineering, Materials Science +16

Determination of cesium distributions in oxides of MOS structures by photoinjection studies

G. Sixt, Michael Schulz, A. Goetzberger · Applied Physics A · 1974 · 12 citations

Natural Sciences, Chemistry, Materials Science +13

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