Effects of annealing on profiles of aluminum implanted in silicon carbide

Abstract

The effects of isothermal annealing on the profiles of heavy (4×1016 Al+/cm2 at 60 keV) implantations of Al in SiC were investigated by means of the 27Al(p,γ)28Si nuclear resonance technique. Annealing at 1400 °C for 15 min resulted in the apparent outdiffusion of about 30% of the implanted Al, an accumulation of Al at the surface, and a residual peak at the depth of the as−implanted profile. Subsequent annealing showed continued apparent outdiffusion with the release of Al from trapping sites as the rate−limiting process.