Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Semiconductors, Heat Treatment, Si Substrate +11

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

R. Fischer, H. Morkoç̌, D. A. Neumann et al. · Journal of Applied Physics · 1986 · 270 citations

Materials Engineering, Semiconductors, Materials Science +13

Efficiency calculations of thin-film GaAs solar cells on Si substrates

Masafumi Yamaguchi, Chikara Amano · Journal of Applied Physics · 1985 · 218 citations

Wide-bandgap Semiconductor, Thin-film Gaas Layer, Electrical Engineering +15

Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

T. I. Kamins, Mohammad M. Mandurah, Krishna C. Saraswat · Journal of The Electrochemical Society · 1978 · 190 citations

Materials Science, Materials Engineering, Semiconductors +13

Structure and Properties of LPCVD Silicon Films

T. I. Kamins · Journal of The Electrochemical Society · 1980 · 154 citations

Semiconductors, Materials Science, Electrical Engineering +15