Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Alain Rolland, J. Richard, Jean‐Paul Kleider et al. · Journal of The Electrochemical Society · 1993 · 260 citations

Engineering, Electrical Engineering, Physics +17

Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

A.J. Snell, Kenneth D. Mackenzie, W. E. Spear et al. · Applied Physics A · 1981 · 252 citations

Engineering, Electrical Engineering, Materials Science +14

Effect of NH3 plasma treatment of gate nitride on the performance of amorphous silicon thin-film transistors

Shengwen Luan, G.W. Neudeck · Journal of Applied Physics · 1990 · 17 citations · Full text

Engineering, Electrical Engineering, Physics +17

The Characterization of Al₂O₃ Prepared by Anodic Oxidation

Ching‐Fa Yeh, Juing‐Yi Cheng, Jau-Hone Lu Jau-Hone Lu · Japanese Journal of Applied Physics · 1993 · 15 citations

Engineering, Materials Engineering, Materials Science +17

Improved Oxide Properties by Anodization of Aluminum Films with Thin Sputtered Aluminum Oxide Overlays

S. G. Byeon, Yonhua Tzeng · Journal of The Electrochemical Society · 1988 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +17