Jean‐Paul Kleider

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Alain Rolland, J. Richard, Jean‐Paul Kleider et al. · Journal of The Electrochemical Society · 1993 · 260 citations

Engineering, Electrical Engineering, Physics +17

General analysis of the modulated-photocurrent experiment including the contributions of holes and electrons

Christophe Longeaud, Jean‐Paul Kleider · Physical review. B, Condensed matter · 1992 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Midgap density of states in hydrogenated polymorphous silicon

M. Meaudre, R. Meaudre, R. Butté et al. · Journal of Applied Physics · 1999 · 95 citations · Full text

Natural Sciences, Materials Science, Physics +17

Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors

Meiyong Liao, Yasuo Koide, José Alvarez et al. · Physical Review B · 2008 · 92 citations

Engineering, Materials Engineering, Materials Science +17

Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements

Caspar Leendertz, Nicola Mingirulli, T. F. Schulze et al. · Applied Physics Letters · 2011 · 86 citations

Engineering, Materials Engineering, Materials Science +17