Japanese Journal of Applied Physics · 1993 · 15 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsAluminum OxidesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSurface OxidationThin Film Electrical PropertiesThin-film TransistorsAmorphous SiliconAmorphous Silicon Thin-film TransistorsAnodic OxidationCurrent DensityMetal Gate ElectrodesOxidation Defect FormationResistivityThin Oxide Films
Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al 2 O 3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al 2 O 3 is developed by anodic oxidation method. The electrical characteristics of Al 2 O 3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al 2 O 3 has been developed. In addition, the double-layer of Al 2 O 3 /SiN is also shown to be sufficiently protective against hillock formation.
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