M. S. Feng

Study of Schottky barriers on <i>n</i>-type GaN grown by low-pressure metalorganic chemical vapor deposition

Jingquan Guo, M. S. Feng, R. J. Guo et al. · Applied Physics Letters · 1995 · 146 citations

Engineering, Materials Engineering, Materials Science +17

Homoepitaxial growth of large-area rhombohedral-stacked MoS2

Lei Liu, Taotao Li, Xiaoshu Gong et al. · Nature Materials · 2025 · 47 citations

Natural Sciences, Materials Science, Physics +14

Stripe-geometry Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well lasers via hydrogenation

Gordon Jackson, N. Pan, M. S. Feng et al. · Applied Physics Letters · 1987 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of Plasma Enhanced Chemical Vapor Deposition Substrate Heating on the Electrical Properties of α‐Si:H Thin Film Transistors

M. S. Feng, Chuntao Liang, D.H. Tseng · Journal of The Electrochemical Society · 1994 · 23 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Chuntao Liang, Tien-Ying Luo, M. S. Feng et al. · Materials Chemistry and Physics · 1996 · 19 citations

Engineering, Materials Engineering, Materials Science +14