Applied Physics Letters · 1995 · 146 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsWide Band Gap SemiconductorsBarrier HeightsCurrent DensityCurrent-voltage CharacterizationMetalorganic Chemical Vapor DepositionSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky BarriersSchottky Contacts
Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports.