Minority carrier generation time and surface generation velocity determination from Q-t measurements

Abstract

The time variation of the charge stored in an MOS capacitor during the transient period following the application of a step voltage is related to the minority-carrier generation mechanisms both in the bulk and in the surface. Therefore, the minority-carrier generation time and surface generation velocity can be determined by measuring the charge as a function of time. The method has been shown to be applicable to samples with both uniform and nonuniform doping concentrations. This technique does not require that the amplitude of the step voltage be kept small. Values of lifetime and surface generation velocity obtained by this technique are shown to agree well with those obtained by the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C-t</tex> technique.