On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions

Andrew S. Grove, D.J. Fitzgerald · Solid-State Electronics · 1966 · 434 citations

Natural Sciences, Electrical Engineering, Materials Science +17

On the determination of minority carrier lifetime from the transient response of an MOS capacitor

F.P. Heiman · IEEE Transactions on Electron Devices · 1967 · 222 citations

Engineering, Electrical Engineering, Materials Science +16

Measurements of the recombination velocity at germanium surfaces

Donald T. Stevenson, R. J. Keyes · Physica · 1954 · 151 citations

Natural Sciences, Materials Science, Physics +11

Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method

C. Jund, R. Poirier · Solid-State Electronics · 1966 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Minority carrier lifetime determination from inversion layer transient response

S.R. Hofstein · IEEE Transactions on Electron Devices · 1967 · 54 citations

Engineering, Electrical Engineering, Materials Science +17