Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells

Abstract

The effect of strain on thresholdless Auger recombination in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of carriers has been carried out. It is shown that the strain affects both qualitatively and quantitatively the overlap integral between the electron and hole states. The Auger recombination coefficient is calculated for InAlAsSb quantum well and its dependence on quantum well parameters, strain, and temperature is analyzed.