Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets

Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition

Shiro Tsukamoto, Y. Nagamune, M. Nishioka et al. · Journal of Applied Physics · 1992 · 166 citations

Engineering, Materials Engineering, Materials Science +17

Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

R. Bhat, E. Kapon, D. M. Hwang et al. · Journal of Crystal Growth · 1988 · 153 citations

Engineering, Materials Engineering, Materials Science +14

Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substrates

M. Walther, E. Kapon, J. Christen et al. · Applied Physics Letters · 1992 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

S. Shimomura, Akio Wakejima, Akira Adachi et al. · Japanese Journal of Applied Physics · 1993 · 97 citations

Engineering, Materials Engineering, Materials Science +17

Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substrates

R. Nötzel, Jiro Temmyo, Hidehiko Kamada et al. · Applied Physics Letters · 1994 · 89 citations

Engineering, Materials Engineering, Materials Science +17