Applied Physics Letters · 1994 · 89 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum DotsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringEpitaxial Thin FilmsExcitationMetalorganic Vapor Phase EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Well StructuresStrain EffectsStrained Quantum Wells
We have recently found that quantum-box-like structures are formed during spontaneous reorganization of a sequence of AlGaAs and strained InGaAs epitaxial films grown on GaAs (311)B substrates by metalorganic vapor-phase epitaxy into InGaAs islands (disks) buried beneath AlGaAs. The size of the disks is directly controlled by the In content in the range 200–30 nm. Strong photoluminescence (PL) efficiency at room temperature is observed in these strained quantum disks. Even for the 30 nm disk the radiative efficiency is not reduced compared to the reference (100) quantum well. The PL spectra are characterized by narrow linewidth and well resolved exciton resonances in excitation spectroscopy.
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Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations