Applied Physics Letters · 2013 · 29 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsHeat TransferMicroelectronicsCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationThermal ManagementThermal Properties Of CeramicsAmbient Temperature EffectsElectrothermal SimulationJoule HeatingResistive SwitchingResistive Switching MaterialsSelf-heating EffectsSwitching DevicesThermal Device Simulation
The transient electroforming process of TiO2-based resistive switching devices is investigated using a pulsed voltage method, and the electroforming time is found to vary from 10−8 s to 10−1 s as function of pulse magnitude (3–8 V) and ambient temperature (25–100 °C). Pulsed experiments and thermal simulations reveal that Joule self-heating has a significant effect on the electroforming dynamics, specially for electroforming voltages above 5.5 V where there is little dependence on ambient temperature and the electroforming time (10–100 ns) is much shorter than the device thermal time constant (≈2 μs).
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Reproducible resistance switching in polycrystalline NiO films
Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations
Natural Sciences, Materials Engineering, Materials Science +16
High switching endurance in TaOx memristive devices
J. Joshua Yang, M.-X. Zhang, John Paul Strachan et al. · Applied Physics Letters · 2010 · 634 citations · Full text