Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model

Electronic properties of two-dimensional systems

Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations

Natural Sciences, Chemistry, Physics +16

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

Frank Stern, W. E. Howard · Physical Review · 1967 · 1.9K citations

Engineering, Materials Engineering, Materials Science +14

Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers

Frank Stern · Physical review. B, Solid state · 1972 · 1.2K citations

Engineering, Materials Engineering, Materials Science +17

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

F. Stern · Physical Review D · 1967 · 691 citations

Engineering, Materials Engineering, Materials Science +14

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Engineering, Computer Engineering, Electrical Engineering +17