In-situ maskless selective area epitaxy of GaAs using a low-energy Ga focused ion beam

Focused ion beam technology and applications

J. Melngailis · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 611 citations

Engineering, Materials Science, Physics +11

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

Natural Sciences, Materials Engineering, Materials Science +14

Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems

Izuo Hayashi · Japanese Journal of Applied Physics · 1993 · 110 citations

Engineering, Computer Engineering, Materials Science +14

Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction

Toshiro Isu, Akiyoshi Watanabe, Masayuki Hata et al. · Japanese Journal of Applied Physics · 1988 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

Semiconductor lasers fabricated by selective area epitaxy

Yuh‐Lin Wang, H. Temkin, R. A. Hamm et al. · Electronics Letters · 1991 · 33 citations

Engineering, Electrical Engineering, Materials Science +16