Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process

C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon

K. Izumi, M. Doken, Hisashi Ariyoshi · Electronics Letters · 1978 · 535 citations

Thickness increment of buried oxide in a SIMOX wafer by high-temperature oxidation

Satοru Nakashima, T. Katayama, Yoshiji Miyamura et al. · 2002 · 34 citations

Engineering, Oxidation Resistance, Silicon On Insulator +17

SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter

Satοru Nakashima, K. Izumi · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 32 citations

Materials Engineering, Materials Science, Engineering +7

Defect Control in Nitrogen Doped Czochralski Silicon Crystals

Atsushi Ikari, Katsuhiko Nakai, Yuya Tachikawa et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1999 · 28 citations

Materials Science, Engineering, Crystal Growth Technology +6

Influence of Crystal Originated Particles on Gate Oxide Breakdown

H. Deai, Toshio Iwasaki, Yoichi Ikematsu et al. · Japanese Journal of Applied Physics · 1996 · 18 citations

Engineering, Copper Plating, Higher Electric Field +19