Concepedia

Hisashi Ariyoshi

HA

5

Publications

620

Citations

5

H-Index

1978

Active since

Affiliations

NTT (Japan)(Current)

Hisashi Ariyoshi is an author at NTT (Japan) specializing in engineering, electrical engineering, and oxide semiconductors.

Top concepts

Publications per year

1978–1980

5

Publications

5

C.M.O.S. devices fabricated on buried SiO <sup>2</sup> layers formed by oxygen implantation into silicon

K. Izumi, M. Doken, Hisashi Ariyoshi · Electronics Letters · 1978 · 535 citations

A two-dimensional analysis for MOSFET's fabricated on buried SiO<sub>2</sub>layer

Eiichi Sano, R. Kasai, K. Ohwada et al. · IEEE Transactions on Electron Devices · 1980 · 36 citations

, , +12

Reliability Evaluation and Failure Analysis for Multilayer Ceramic Chip Capacitors

T. Kobayashi, Hisashi Ariyoshi, Atsushi Masuda · IEEE Transactions on Components Hybrids and Manufacturing Technology · 1978 · 23 citations

, , +16

Hybrid IC Structures Using Solder Reflow Technology

T. Kamei, M. Nakamura, Hisashi Ariyoshi et al. · IEEE Transactions on Components Hybrids and Manufacturing Technology · 1979 · 13 citations

High Speed C-MOS IC Using Buried SiO<sub>2</sub> Layers Formed by Ion Implantation

Katsutoshi Izumi, M. Doken, Hisashi Ariyoshi · Japanese Journal of Applied Physics · 1980 · 13 citations · Full text

, , +9

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