Yoshiji Miyamura

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

Satοru Nakashima, T. Katayama, Yoshiji Miyamura et al. · Journal of The Electrochemical Society · 1996 · 65 citations

Engineering, Oxidation Resistance, Implanted Oxygen +18

Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

Bing Gao, Satoshi Nakano, Hidekiyo Harada et al. · Journal of Crystal Growth · 2011 · 56 citations

Engineering, Seeded Growth, Crucible Wall +3

Thermal stress induced dislocation distribution in directional solidification of Si for PV application

Karolin Jiptner, Bing Gao, Hirofumi Harada et al. · Journal of Crystal Growth · 2014 · 39 citations

Materials Science, Materials Engineering, Thermal Stress +12

Thickness increment of buried oxide in a SIMOX wafer by high-temperature oxidation

Satοru Nakashima, T. Katayama, Yoshiji Miyamura et al. · 2002 · 34 citations

Engineering, Oxidation Resistance, Silicon On Insulator +17

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Tsutomu Tezuka, Yoshihiko Moriyama, Shu Nakaharai et al. · Thin Solid Films · 2005 · 34 citations

Ii-vi Semiconductor, Dislocation Generation/annihilation, Engineering +10