Karolin Jiptner

Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Masakazu Baba, Katsuaki Toh, Kaoru Toko et al. · Journal of Crystal Growth · 2012 · 146 citations

Electrical Engineering, Epitaxial Growth, Grain Boundaries +11

Thermal stress induced dislocation distribution in directional solidification of Si for PV application

Karolin Jiptner, Bing Gao, Hirofumi Harada et al. · Journal of Crystal Growth · 2014 · 39 citations

Materials Science, Materials Engineering, Thermal Stress +12

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner et al. · Journal of Crystal Growth · 2014 · 31 citations

Materials Science, Engineering, Cast-multicrystalline Silicon +10

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Yoshiji Miyamura, Hidekiyo Harada, Karolin Jiptner et al. · Journal of Crystal Growth · 2014 · 25 citations

Materials Science, Engineering, Crystal Growth Technology +10

Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds

Ronit R. Prakash, Karolin Jiptner, Jun Chen et al. · Applied Physics Express · 2015 · 24 citations

Materials Science, Epitaxial Growth, Engineering +15